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La deposizione chimica da vapore potenziat … La deposizione chimica da vapore potenziata dal plasma (PECVD) è un processo chimico di deposizione di film sottili, i reagenti, in stato gassoso (vapore) vengono inseriti nella camera di deposizione, dove precedentemente era stato fatto il vuoto, Il plasma viene attivato da una radiofrequenza (RF) ( corrente alternata (CA)) o dalla scarica di corrente continua (CC) tra due elettrodi eccitando le molecole che reagiscono, i prodotti della reazione allo stato solido si depositano sul substrato, diffondono, si aggregano e creano il film sottile desiderato.egano e creano il film sottile desiderato.
, プラズマCVD（plasma CVD, plasma-enhanced chemical vapor deposition, PECVD）は、プラズマを援用する型式の化学気相成長(CVD)の一種である。さまざまな物質の薄膜を形成する蒸着法のひとつである。化学反応を活性化させるため、高周波などを印加することで原料ガスをプラズマ化させるのが特徴である。半導体素子の製造などに広く用いられる。
, Плазменно-химическое осаждение из газовой … Плазменно-химическое осаждение из газовой фазы сокр., ПХО; ПХГФО иначе плазмохимическое газофазное осаждение; осаждение из паровой фазы стимулированное плазмой (англ. plasma-enhanced chemical vapor deposition) — процесс химического осаждения тонких плёнок из паровой фазы при низком давлении с использованием высокочастотной плазмы.и с использованием высокочастотной плазмы.
, Die plasmaunterstützte chemische Gasphasen … Die plasmaunterstützte chemische Gasphasenabscheidung (englisch plasma-enhanced chemical vapour deposition, PECVD; auch engl. plasma-assisted chemical vapour deposition, PACVD, genannt) ist eine Sonderform der chemischen Gasphasenabscheidung (CVD), bei der die chemische Abscheidung durch ein Plasma unterstützt wird. Das Plasma kann direkt beim zu beschichtenden Substrat (Direktplasma-Methode) oder in einer getrennten Kammer (Remote-Plasma-Methode) brennen.en Kammer (Remote-Plasma-Methode) brennen.
, Plasma Enhanced Chemical Vapor Deposition of kortweg PECVD is de aanduiding van het proces, waarmee met behulp van een een dunne laag op een substraat of basismateriaal wordt aangebracht bij relatief lagere temperatuur.
, Le dépôt chimique en phase vapeur assisté … Le dépôt chimique en phase vapeur assisté par plasma (ou PECVD, pour Plasma-Enhanced Chemical Vapor Deposition en anglais) est un procédé utilisé pour déposer des couches minces sur un substrat à partir d'un état gazeux (vapeur). Des réactions chimiques se déroulent au cours du processus après la formation d'un plasma à partir des gaz du réacteur. Le plasma est généralement créé à partir de ce gaz par une décharge électrique pouvant être générée à partir de sources radio-fréquences (13,56 MHz), micro-ondes (2,45 GHz) ou par une décharge électrique continue entre deux électrodes.électrique continue entre deux électrodes.
, Plasma-enhanced chemical vapor deposition … Plasma-enhanced chemical vapor deposition (PECVD) is a chemical vapor deposition process used to deposit thin films from a gas state (vapor) to a solid state on a substrate. Chemical reactions are involved in the process, which occur after creation of a plasma of the reacting gases. The plasma is generally created by radio frequency (RF) (alternating current (AC)) frequency or direct current (DC) discharge between two electrodes, the space between which is filled with the reacting gases.n which is filled with the reacting gases.
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La deposizione chimica da vapore potenziat … La deposizione chimica da vapore potenziata dal plasma (PECVD) è un processo chimico di deposizione di film sottili, i reagenti, in stato gassoso (vapore) vengono inseriti nella camera di deposizione, dove precedentemente era stato fatto il vuoto, Il plasma viene attivato da una radiofrequenza (RF) ( corrente alternata (CA)) o dalla scarica di corrente continua (CC) tra due elettrodi eccitando le molecole che reagiscono, i prodotti della reazione allo stato solido si depositano sul substrato, diffondono, si aggregano e creano il film sottile desiderato.egano e creano il film sottile desiderato.
, Плазменно-химическое осаждение из газовой … Плазменно-химическое осаждение из газовой фазы сокр., ПХО; ПХГФО иначе плазмохимическое газофазное осаждение; осаждение из паровой фазы стимулированное плазмой (англ. plasma-enhanced chemical vapor deposition) — процесс химического осаждения тонких плёнок из паровой фазы при низком давлении с использованием высокочастотной плазмы.и с использованием высокочастотной плазмы.
, プラズマCVD（plasma CVD, plasma-enhanced chemical vapor deposition, PECVD）は、プラズマを援用する型式の化学気相成長(CVD)の一種である。さまざまな物質の薄膜を形成する蒸着法のひとつである。化学反応を活性化させるため、高周波などを印加することで原料ガスをプラズマ化させるのが特徴である。半導体素子の製造などに広く用いられる。
, Plasma-enhanced chemical vapor deposition … Plasma-enhanced chemical vapor deposition (PECVD) is a chemical vapor deposition process used to deposit thin films from a gas state (vapor) to a solid state on a substrate. Chemical reactions are involved in the process, which occur after creation of a plasma of the reacting gases. The plasma is generally created by radio frequency (RF) (alternating current (AC)) frequency or direct current (DC) discharge between two electrodes, the space between which is filled with the reacting gases.n which is filled with the reacting gases.
, Plasma Enhanced Chemical Vapor Deposition of kortweg PECVD is de aanduiding van het proces, waarmee met behulp van een een dunne laag op een substraat of basismateriaal wordt aangebracht bij relatief lagere temperatuur.
, Die plasmaunterstützte chemische Gasphasen … Die plasmaunterstützte chemische Gasphasenabscheidung (englisch plasma-enhanced chemical vapour deposition, PECVD; auch engl. plasma-assisted chemical vapour deposition, PACVD, genannt) ist eine Sonderform der chemischen Gasphasenabscheidung (CVD), bei der die chemische Abscheidung durch ein Plasma unterstützt wird. Das Plasma kann direkt beim zu beschichtenden Substrat (Direktplasma-Methode) oder in einer getrennten Kammer (Remote-Plasma-Methode) brennen.en Kammer (Remote-Plasma-Methode) brennen.
, Le dépôt chimique en phase vapeur assisté … Le dépôt chimique en phase vapeur assisté par plasma (ou PECVD, pour Plasma-Enhanced Chemical Vapor Deposition en anglais) est un procédé utilisé pour déposer des couches minces sur un substrat à partir d'un état gazeux (vapeur). Des réactions chimiques se déroulent au cours du processus après la formation d'un plasma à partir des gaz du réacteur. Le plasma est généralement créé à partir de ce gaz par une décharge électrique pouvant être générée à partir de sources radio-fréquences (13,56 MHz), micro-ondes (2,45 GHz) ou par une décharge électrique continue entre deux électrodes.électrique continue entre deux électrodes.
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| rdfs:label |
Plasma-enhanced chemical vapor deposition
, プラズマCVD
, Плазменно-химическое осаждение из газовой фазы
, Deposizione chimica da vapore potenziata dal plasma
, Dépôt chimique en phase vapeur assisté par plasma
, Plasmaunterstützte chemische Gasphasenabscheidung
, Deposició química de vapor millorada per plasma
|
