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https://doi.org/10.1007/S11432-010-0078-9 +
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https://doi.org/10.1007/S11432-010-0078-9 +
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7
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1089-1096
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https://doi.org/10.1007/S11432-010-0078-9 +
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Sci. China Inf. Sci.
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Sci. China Inf. Sci.
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53
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5
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Improvements on radiation-hardened performance of static induction transistor.
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2010
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Yongshun Wang et al.: Improvements on radiation-hardened performance of static induction transistor. (2010)
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